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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Identifieur interne : 00A479 ( Main/Repository ); précédent : 00A478; suivant : 00A480

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Auteurs : RBID : Pascal:04-0197904

Descripteurs français

Pascal (Inist)
- 8560J, 8530D, 7363H, Etude expérimentale, Cristal photonique, Dispositif puits quantique, Diode électroluminescente, Propriété électrique, Gallium composé, Azote composé, Indium composé, Gravure.

English descriptors

KwdEn :
- Electrical properties, Etching, Experimental study, Gallium compounds, Indium compounds, Light emitting diodes, Nitrogen compounds, Photonic crystals, Quantum well devices.

Abstract

Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers are engineered to provide lateral current spreading, allowing carrier recombination proximal to the photonic crystal yet displaced from the metal contact. The chosen lattice spacing for the photonic crystal causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency. The far-field radiation patterns of the PXLEDs are heavily modified and display increased radiance, up to ∼1.5 times brighter compared to similar LEDs without the photonic crystal. © 2004 American Institute of Physics.

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Pascal:04-0197904

Le document en format XML

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<front><div type="abstract" xml:lang="en">Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers are engineered to provide lateral current spreading, allowing carrier recombination proximal to the photonic crystal yet displaced from the metal contact. The chosen lattice spacing for the photonic crystal causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency. The far-field radiation patterns of the PXLEDs are heavily modified and display increased radiance, up to ∼1.5 times brighter compared to similar LEDs without the photonic crystal. © 2004 American Institute of Physics.</div>
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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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